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nexperia

NX3008NBKW Datasheet Preview

NX3008NBKW Datasheet

N-channel MOSFET

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NX3008NBKW
30 V, 350 mA N-channel Trench MOSFET
Rev. 1 — 2 August 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 350 mA;
Tj = 25 °C
Min Typ Max Unit
- - 30 V
-8 -
8V
[1] - - 350 mA
- 1 1.4
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.




nexperia

NX3008NBKW Datasheet Preview

NX3008NBKW Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
NX3008NBKW
30 V, 350 mA N-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G gate
S source
D drain
Simplified outline
3
12
SOT323 (SC-70)
Graphic symbol
D
G
S
017aaa255
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
NX3008NBKW
SC-70
4. Marking
Description
plastic surface-mounted package; 3 leads
Version
SOT323
Table 4. Marking codes
Type number
NX3008NBKW
[1] % = placeholder for manufacturing site code
Marking code[1]
AA%
NX3008NBKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 August 2011
© Nexperia B.V. 2017. All rights reserved
2 of 16


Part Number NX3008NBKW
Description N-channel MOSFET
Maker nexperia
Total Page 16 Pages
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