NX2301P datasheet, mosfet equivalent, nexperia

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datasheet Download (Size : 712.65KB)

Features and benefits

* 1.8 V RDSon rated for Low Voltage Gate Drive
* Very fast switching
* Trench MOSFET technology
* AEC-Q101 qualified 1.3 Applications
* Relay driver .

Application

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference.

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits
* 1.8 V RDSon rated for Low Voltage Gate Drive
* Very.

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