NX2301P Datasheet, NXP Semiconductors

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* 1.8 V RDSon rated for Low Voltage Gate Drive Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications
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* Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference.

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits
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* 1.8 V RDSon rated for Low Voltage Gat.