NSF080120D7A0 Datasheet | Nexperia

TO-263-7 1200 V, 80 mΩ, N-channel Si C MOSFET 14 May 2024 Product data sheet 1. General description The NSF080120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability bined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives. 2. Features and benefits - Excellent RDSon temperature stability - Very low switching losses - Fast reverse recovery - Fast switching speed - Temperature independent turn-off switching losses - Very fast and robust intrinsic body diode - Faster mutation and improved switching due to the additional Kelvin source pin 3. Applications - E-vehicle charging infrastructure - Photovoltaic inverters - Switch mode power supply - Uninterruptable power supply - Motor drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current IDM peak drain current Static characteristics RDSon drain-source on-state...