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NSF080120L4A0 - N-channel SiC MOSFET

Datasheet Summary

Description

The NSF080120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology.

Features

  • Excellent RDSon temperature stability.
  • Very low switching losses.
  • Fast reverse recovery.
  • Fast switching speed.
  • Temperature independent turn-off switching losses.
  • Very fast and robust intrinsic body diode.
  • Faster commutation and improved switching due to the additional Kelvin source pin. 3.

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Datasheet preview – NSF080120L4A0

Datasheet Details

Part number NSF080120L4A0
Manufacturer nexperia
File Size 301.15 KB
Description N-channel SiC MOSFET
Datasheet download datasheet NSF080120L4A0 Datasheet
Additional preview pages of the NSF080120L4A0 datasheet.

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Full PDF Text Transcription

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NSF080120L4A0 1200 V, 80 mΩ, N-channel SiC MOSFET 2 February 2024 Product data sheet 1. General description The NSF080120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives. 2.
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