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BUK9Y7R6-40E Datasheet Preview

BUK9Y7R6-40E Datasheet

N-channel MOSFET

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BUK9Y7R6-40E
N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56
7 May 2013
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 20 A; Tj = 25 °C; Fig. 11
resistance
Dynamic characteristics
QGD
gate-drain charge
VGS = 5 V; ID = 20 A; VDS = 32 V;
Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit
- - 40 V
- - 79 A
- - 95 W
- 6.4 7.6 mΩ
- 5.5 - nC




nexperia

BUK9Y7R6-40E Datasheet Preview

BUK9Y7R6-40E Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
BUK9Y7R6-40E
N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4G
mb D
gate
mounting base; connected to
drain
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK9Y7R6-40E
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
BUK9Y7R6-40E
Marking code
97E640
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
RGS = 20 kΩ
VGS gate-source voltage
Tj ≤ 175 °C; DC
Tj ≤ 175 °C; Pulsed
ID drain current
Tmb = 25 °C; VGS = 5 V; Fig. 1
Tmb = 100 °C; VGS = 5 V; Fig. 1
IDM peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
[1][2]
Min
-
-
-10
-15
-
-
-
-
Max
40
40
10
15
79
56
315
95
Unit
V
V
V
V
A
A
A
W
BUK9Y7R6-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 May 2013
© Nexperia B.V. 2017. All rights reserved
2 / 13


Part Number BUK9Y7R6-40E
Description N-channel MOSFET
Maker nexperia
Total Page 13 Pages
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