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BUK7Y1R4-40H Datasheet Preview

BUK7Y1R4-40H Datasheet

N-channel MOSFET

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BUK7Y1R4-40H
N-channel 40 V, 1.4 mΩ standard level MOSFET in LFPAK56
31 May 2018
Product data sheet
1. General description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction
technology, housed in a robust LFPAK56 package. This product has been fully designed and
qualified to meet AEC-Q101 requirements delivering high performance and endurance.
2. Features and benefits
Fully automotive qualified to AEC-Q101:
175 °C rating suitable for thermally demanding environments
Trench 9 Superjunction technology:
Reduced cell pitch enables enhanced power density and efficiency with lower RDSon in
same footprint
Improved SOA and avalanche capability compared to standard TrenchMOS
Tight VGS(th) limits enable easy paralleling of MOSFETs
LFPAK Gull Wing leads:
High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike
traditional QFN packages
Visual (AOI) soldering inspection, no need for expensive x-ray equipment
Easy solder wetting for good mechanical solder joint
LFPAK copper clip technology:
Improved reliability, with reduced Rth and RDSon
Increases maximum current capability and improved current spreading
3. Applications
12 V automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Conditions
25 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
Tmb = 25 °C; Fig. 1
Min Typ Max Unit
- - 40 V
[1] - - 190 A
- - 395 W




nexperia

BUK7Y1R4-40H Datasheet Preview

BUK7Y1R4-40H Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
BUK7Y1R4-40H
N-channel 40 V, 1.4 mΩ standard level MOSFET in LFPAK56
Symbol
Parameter
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
Source-drain diode
Qr recovered charge
S softness factor
Conditions
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11
ID = 25 A; VDS = 32 V; VGS = 10 V;
Fig. 13; Fig. 14
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C; Fig. 17
Min Typ Max Unit
0.74 1.06 1.4 mΩ
-
13.4 27
nC
- 39 - nC
- 0.7 -
[1] 190A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4G
mb D
gate
mounting base; connected to
drain
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK7Y1R4-40H
LFPAK56;
Power-SO8
Description
plastic, single-ended surface-mounted package; 4 terminals
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
BUK7Y1R4-40H
Marking code
71H440
BUK7Y1R4-40H
Product data sheet
All information provided in this document is subject to legal disclaimers.
31 May 2018
© Nexperia B.V. 2018. All rights reserved
2 / 12


Part Number BUK7Y1R4-40H
Description N-channel MOSFET
Maker nexperia
Total Page 12 Pages
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