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BUK6D120-60P - P-channel MOSFET

General Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Extended temperature range Tj = 175 ℃.
  • Side wettable flanks for optical solder inspection.
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm.
  • Trench MOSFET technology.
  • AEC-Q101 qualified 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BUK6D120-60P 60 V, P-channel Trench MOSFET 3 April 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Extended temperature range Tj = 175 ℃ • Side wettable flanks for optical solder inspection • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Trench MOSFET technology • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • High-side load switch • Switching circuits 4. Quick reference data Table 1.