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BUK6D140-80P - 80V P-channel Trench MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm.
  • Trench MOSFET technology.
  • Extended temperature range Tj = 175 °C.
  • Side wettable flanks for optical solder inspection.
  • AEC-Q101 qualified 3.

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Full PDF Text Transcription

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BUK6D140-80P 80 V, P-channel Trench MOSFET 1 October 2025 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Trench MOSFET technology • Extended temperature range Tj = 175 °C • Side wettable flanks for optical solder inspection • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • High-side load switch • Switching circuits 4. Quick reference data Table 1.
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