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BUK6D120-40E - N-channel MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Extended temperature range Tj = 175 °C.
  • Side wettable flanks for optical solder inspection.
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C).
  • Trench MOSFET technology.
  • AEC-Q101 qualified 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BUK6D120-40E 40 V, N-channel Trench MOSFET 29 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Extended temperature range Tj = 175 °C • Side wettable flanks for optical solder inspection • ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C) • Trench MOSFET technology • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.