Datasheet4U Logo Datasheet4U.com

BUK664R4-55C - N-channel MOSFET

General Description

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Key Features

  • AEC Q101 compliant.
  • Suitable for intermediate level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUK664R4-55C N-channel TrenchMOS Intermediate Level FET NXP
BUK664R6-40C N-channel TrenchMOS intermediate level FET NXP
BUK664R8-75C N-channel TrenchMOS FET NXP
BUK6607-55C N-Channel MOSFET NXP Semiconductors
BUK6607-75C N-channel TrenchMOS FET NXP Semiconductors

Other Datasheets by Nexperia

Part Number Description
BUK6607-55C N-channel MOSFET
BUK6607-75C N-channel MOSFET
BUK661R6-30C N-channel TrenchMOS intermediate level FET
BUK661R8-30C N-channel MOSFET
BUK661R9-40C N-channel TrenchMOS intermediate level FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BUK664R4-55C N-channel TrenchMOS intermediate level FET Rev. 03 — 21 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.