BUK6607-55C
description
Logic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced Trench MOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits
- AEC Q101 pliant
- Suitable for standard and logic level gate drives
- Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
- 12 V and 24 V automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C voltage
ID drain current
VGS = 10 V; Tmb = 25 °C; see Figure 1
Ptot total power
Tmb = 25 °C; see Figure 2 dissipation
Static characteristics
RDSon...
