74AUP2G38
74AUP2G38 is Low-power dual 2-input NAND gate manufactured by Nexperia.
Low-power dual 2-input NAND gate; open drain
Rev. 10
- 3 December 2020
Product data sheet
1. General description
The 74AUP2G38 provides the dual 2-input NAND gate with open-drain output. The output of the device is an open drain and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down.
2. Features and benefits
- Wide supply voltage range from 0.8 V to 3.6 V
- High noise immunity
- plies with JEDEC standards:
- JESD8-12 (0.8 V to 1.3 V)
- JESD8-11 (0.9 V to 1.65 V)
- JESD8-7 (1.2 V to 1.95 V)
- JESD8-5 (1.8 V to 2.7 V)
- JESD8-B (2.7 V to 3.6 V)
- ESD protection:
- HBM JESD22-A114F Class 3A exceeds 5000 V
- MM JESD22-A115-A exceeds 200 V
- CDM JESD22-C101E exceeds 1000 V
- Low static power consumption; ICC = 0.9 μA (maximum)
- Latch-up performance exceeds 100 m A per JESD78B Class II
- Inputs accept voltages up to 3.6 V
- Low noise overshoot and undershoot < 10 % of VCC
- IOFF circuitry provides partial Power-down mode operation
- Multiple package options
- Specified from -40 °C to +85 °C and -40 °C to +125...
