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74AUP2G38 - Low-power dual 2-input NAND gate

Datasheet Summary

Description

The 74AUP2G38 provides the dual 2-input NAND gate with open-drain output.

The output of the device is an open drain and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions.

Features

  • Wide supply voltage range from 0.8 V to 3.6 V.
  • High noise immunity.
  • Complies with JEDEC standards:.
  • JESD8-12 (0.8 V to 1.3 V).
  • JESD8-11 (0.9 V to 1.65 V).
  • JESD8-7 (1.2 V to 1.95 V).
  • JESD8-5 (1.8 V to 2.7 V).
  • JESD8-B (2.7 V to 3.6 V).
  • ESD protection:.
  • HBM JESD22-A114F Class 3A exceeds 5000 V.
  • MM JESD22-A115-A exceeds 200 V.
  • CDM JESD22-C101E exceeds 1000 V.
  • Low static power consump.

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Datasheet Details

Part number 74AUP2G38
Manufacturer nexperia
File Size 248.09 KB
Description Low-power dual 2-input NAND gate
Datasheet download datasheet 74AUP2G38 Datasheet
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74AUP2G38 Low-power dual 2-input NAND gate; open drain Rev. 10 — 3 December 2020 Product data sheet 1. General description The 74AUP2G38 provides the dual 2-input NAND gate with open-drain output. The output of the device is an open drain and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions. Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial Power-down applications using IOFF.
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