NP8N06 mosfet equivalent, 60v n-channel enhancement mode mosfet.
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* VDS =60V ID =8A
RDS(ON)(Typ.)=15mΩ @VGS=10V
RDS(ON)(Typ.)=16.5mΩ @VGS=4.5V
* Lead free product is acquired
* Surface mount package
Application
100%.
Schematic diagram
The NP8N06 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) a.
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