Marking and pin assignment
* VDS =60V，ID =20A RDS(ON)(Typ.)=18.5mΩ @VGS=10V RDS(ON)(Typ.)=22 mΩ @VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* V.

XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP6020D6-Sn-G Storage Temperature -55°C to.

Schematic diagram The NP6020D6-Sn uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combin.

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