D G
* VDS =60V ID =10A RDS(ON)<25mΩ @VGS=10V (Typ:21m Ω) S RDS(ON)<28mΩ @VGS=4.5V (Typ:25m Ω)
* High density cell design for ultra low Rdson. Marking and pi.

General Features D G
* VDS =60V ID =10A RDS(ON)<25mΩ @VGS=10V (Typ:21m Ω) S RDS(ON)<28mΩ @VGS=4.5V (Typ:25m Ω).

Schematic diagram The NP6008N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features D G
* VDS =60V ID =10A RDS(ON)<25mΩ @VGS=10V (Typ:.

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