NP4N65G mosfet equivalent, 650v n-channel enhancement mode mosfet.
* VDS =650V，ID =4A
RDS(ON)(Typ.)= 2.49Ω @VGS=10V
* High power and current handing capability
* Lead free product is acquired
* Surface mount package
*.
General Features
* VDS =650V，ID =4A
RDS(ON)(Typ.)= 2.49Ω @VGS=10V
* High power and current handing capability .
Schematic diagram
The NP4N65G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.
General Features
* VDS =650V，ID =4A
RDS(ON)(Typ.)= 2.49Ω @VGS=10V
* High p.
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