4N60G mosfet equivalent, n-channel power mosfet.
RDS(ON) = 2.5Ω@VGS = 10V Ultra low gate charge(20nC max.) Low reverse transfer capacitance (CRSS = 8pF typical) Fast switching capability 100% avalanche energy specified .
such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switc.
The Nell 4N60 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts.
They are designed for use in applicatio.
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