4N60 mosfet equivalent, n-channel mosfet.
* 600V, RDS(ON) =2.1Ω@ VGS=10V
* Ultra low gate charge (typ Qg=15.5nC)
* Low Reverse capacitance (typ Crss=8pF)
* 100% avalanche tested
* RoHS complia.
in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
2. Features
* 600V, .
The KIA4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high spe.
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