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BSM 50 GD 120 DN2G
IGBT Power Module
• Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate
Type BSM 50 GD 120 DN2G
VCE IC 1200V 78A
Package ECONOPACK 3
Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 kΩ Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C Power dissipation per IGBT TC = 25 °C Chip temperature Storage temperature
Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min.
BSM50GD120DN2G Datasheet
