TPS1110Y datasheet, mosfets equivalent, Texas Instruments

Features and benefits

extremely low-rDS(on) values coupled with logic-level gate-drive capability and very low drain-source leakage current. With a maximum VGS(th) of
– 0.9 V a.

Application

For compatibility with existing designs, the TPS1110 has a pinout common with other P-channel MOSFETs in small-outline .

Description

The TPS1110 is a single, low-rDS(on), P-channel enhancement-mode power MOS transistor. The device features extremely low-rDS(on) values coupled with logic-level gate-drive capability and very low drain-source leakage current. With a maximum VGS(th) o.

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