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TPS1110 - SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS

Description

The TPS1110 is a single, low-rDS(on), P-channel enhancement-mode power MOS transistor.

Features

  • extremely low-rDS(on) values coupled with logic-level gate-drive capability and very low drain-source leakage current. With a maximum VGS(th) of.
  • 0.9 V and an IDSS of only.
  • 100 nA, the TPS1110 is the ideal high-side switch for low-voltage, portable battery-management power-distribution systems where maximizing battery life is an important concern. The thermal performance of the 8-pin small-outline (D) package has been greatly enhanced over the standard 8-pin SOIC, further making.

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Other Datasheets by Texas Instruments

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TPS1110Y SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPS1110, TPS1110Y SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS D Low rDS(on) . . . 65 mΩ Typ at VGS = – 4.5 V D High Current Capability 6 A at VGS = – 4.5 V D Logic-Level Gate Drive (3 V Compatible) VGS(th) = – 0.9 V Max D Low Drain-Source Leakage Current < 100 nA From 25°C to 75°C at VDS = – 6 V D Fast Switching . . . 5.8 ns Typ td(on) D Small-Outline Surface-Mount Power Package SLVS100B – OCTOBER 1994 – REVISED JANUARY 1998 D PACKAGE (TOP VIEW) SOURCE SOURCE SOURCE GATE 1 2 3 4 8 DRAIN 7 DRAIN 6 DRAIN 5 DRAIN description The TPS1110 is a single, low-rDS(on), P-channel enhancement-mode power MOS transistor. The device features extremely low-rDS(on) values coupled with logic-level gate-drive capability and very low drain-source leakage current. With a maximum VGS(th) of – 0.
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