LM5112
Description
The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads.
Key Features
- 1 LM5112-Q1 is Qualified for Automotive Applications
- AEC-Q100 Grade 1 Qualified
- Manufactured on an Automotive Grade Flow
- Compound CMOS and Bipolar Outputs Reduce Output Current Variation
- 7-A Sink and 3-A Source Current
- Fast Propagation Times: 25 ns (Typical)
- Fast Rise and Fall Times: 14 ns or 12 ns Rise or Fall With 2-nF Load
- Inverting and Non-Inverting Inputs Provide Either Configuration With a Single Device
- Supply Rail Undervoltage Lockout Protection
- Dedicated Input Ground (IN_REF) for Split Supply or Single Supply Operation
