LM5113
Description
The LM5113 device is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration.
Key Features
- 1 Independent high-side and low-side TTL logic inputs
- 1.2 A / 5 A peak source/sink current
- High-side floating bias voltage rail Operates up to 100 VDC
- Internal bootstrap supply voltage clamping
- Split outputs for adjustable turnon/turnoff strength
- 0.6-Ω / 2.1-Ω pulldown/pullup resistance
- Fast propagation times (28 ns typical)
- Excellent propagation delay matching (1.5 ns typical)
- Supply rail undervoltage lockout
- Low power consumption
