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CSD18532KCS - 60V N-Channel MOSFET

General Description

This 60V, 3.3mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Key Features

  • Ultra-low Qg and Qgd.
  • Low thermal resistance.
  • Avalanche rated.
  • Logic level.
  • Pb free terminal plating.
  • RoHS compliant.
  • Halogen free.
  • TO-220 plastic package 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD18532KCS SLPS361C – AUGUST 2012 – REVISED MARCH 2024 CSD18532KCS 60V N-Channel NexFET™ Power MOSFET 1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Logic level • Pb free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • DC-DC conversion • Secondary side synchronous rectifier • Motor control Description This 60V, 3.3mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Drain (Pin 2) Gate (Pin 1) Source (Pin 3) 12 TC = 25°C Id = 100A 10 TC = 125ºC Id = 100A 8 6 4 2 Product Summary TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage 60 Qg Gate Charge Total (10V) 44 Qgd Gate Charge Gate-to-Drain 6.9 RDS(on) Drain-to-Source On Resistance VGS = 4.