Datasheet4U Logo Datasheet4U.com

CSD18533KCS - 60V N-Channel power MOSFET

Description

This 60V, 5.0mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Features

  • Ultra-low Qg and Qgd.
  • Low thermal resistance.
  • Avalanche rated.
  • Logic level.
  • Pb-free terminal plating.
  • RoHS compliant.
  • Halogen free.
  • TO-220 plastic package 2.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CSD1833 NPN SILICON EPITAXIAL POWER TRANSISTOR CDIL
CSD10060 ZERO RECOVERY RECTIFIER ETC
CSD10060A ZERO RECOVERY RECTIFIER ETC
CSD10060B ZERO RECOVERY RECTIFIER ETC
CSD10060G ZERO RECOVERY RECTIFIER ETC

Other Datasheets by Texas Instruments

Part Number Description
CSD18533Q5A power MOSFET
CSD18531Q5A N-Channel MOSFET
CSD18532KCS 60V N-Channel MOSFET
CSD18532NQ5B N-Channel MOSFET
CSD18532Q5B N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
CSD18533KCS SLPS362D – SEPTEMBER 2012 – REVISED MARCH 2024 CSD18533KCS 60V N-Channel NexFET™ Power MOSFET 1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Logic level • Pb-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • DC-DC conversion • Secondary side synchronous rectifier • Motor control 3 Description This 60V, 5.0mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. SPACE Drain (Pin 2) Gate (Pin 1) Source (Pin 3) Product Summary TA = 25°C TYPICAL VALUE VDS Drain-to-source voltage 60 Qg Gate charge total (10V) 28 Qgd Gate charge gate-to-drain 3.9 RDS(on) Drain-to-source on-resistance VGS = 4.5V VGS = 10V 6.9 5.0 VGS(th) Threshold voltage 1.
Published: |