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CSD18531Q5A - N-Channel MOSFET

General Description

This 60-V, 3.5-mΩ, 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Key Features

  • 1 Ultra-Low Qg and Qgd.
  • Low-Thermal Resistance.
  • Avalanche Rated.
  • Logic Level.
  • Lead-Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5-mm × 6-mm Plastic Package 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design CSD18531Q5A SLPS321G – JUNE 2012 – REVISED AUGUST 2017 CSD18531Q5A 60-V N-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Logic Level • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Battery Motor Control Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 60 36 5.9 VGS = 4.5 V VGS = 10 V 1.8 4.4 3.