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CSD18512Q5B - power MOSFET

Description

This 40 V, 1.3 mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Features

  • 1 Low RDS(ON).
  • Low thermal resistance.
  • Avalanche rated.
  • Logic level.
  • Pb-free terminal plating.
  • RoHS compliant.
  • Halogen-free.
  • SON 5 mm × 6 mm plastic package 2.

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Full PDF Text Transcription (Reference)

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Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design CSD18512Q5B SLPS624A – DECEMBER 2016 – REVISED MARCH 2019 CSD18512Q5B 40 V N-channel NexFET™ power MOSFET 1 Features •1 Low RDS(ON) • Low thermal resistance • Avalanche rated • Logic level • Pb-free terminal plating • RoHS compliant • Halogen-free • SON 5 mm × 6 mm plastic package 2 Applications • DC-DC conversion • Secondary side synchronous rectifier • Motor control Product Summary TA = 25°C VDS Drain to source voltage Qg Gate charge total (10 V) Qgd Gate charge gate to drain RDS(on) Drain to source on resistance VGS(th) Threshold voltage TYPICAL VALUE 40 75 13.3 VGS = 4.5 V VGS = 10 V 1.6 1.8 1.
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