CPD31X Datasheet | centralsemi

Product Brief CPD31X CPD34X 10A, 60V Schottky Rectifier Die Die Size Die Thickness Die Passivation Anode Bonding Pad Area Top Side Metalization (CPD31X) Top Side Metalization (CPD34X) Back Side Metalization Scribe Alley Width Wafer Diameter Gross Die Per Wafer 85 MILS x 85 MILS 5.9 MILS ±0.8 MILS SiN 78 MILS x 78 MILS Al/Ni/Au - 30,000Å/4,000Å/1,500Å Al - 30,000Å Ti/Ni/Au - 1,600Å/5,550Å/1,500Å 3.15 MILS 5 INCHES 2,260 CPD31X CPD34X Features : - - - - - - Low forward voltage at 10 Amps forward current Low reverse leakage current Low profile geometry Metalization suitable for standard die attached technologies Top metalization optimized for solder process (CPD31X) Top metalization optimized...