Datasheet4U Logo Datasheet4U.com

ZXTN2005Z - 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR

General Description

Packaged in the SOT89 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.

Key Features

  • Extremely low equivalent on-resistance; RSAT = 25m at 6.5A.
  • 5.5 amps continuous current.
  • Up to 20 amps peak current.
  • Very low saturation voltages.
  • Excellent hFE characteristics up to 20 amps SOT89.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR Diodes
ZXTN2007G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR Diodes
ZXTN2010G NPN Transistor Diodes
ZXTN2010Z NPN Transistor Diodes
ZXTN2011G NPN Transistor Diodes

Other Datasheets by Zetex (Diodes Incorporated)

Part Number Description
ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR
ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR
ZXTN2018F NPN medium power transistor
ZXTN2020F NPN medium power transistor
ZXTN23015CFH NPN medium power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com ZXTN2005Z 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 25V : RSAT = 25m ; IC = 5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES • Extremely low equivalent on-resistance; RSAT = 25m at 6.5A • 5.