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SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS(ON) = 5Ω
BS170F
S D
PARTMARKING DETAIL – MV
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range
SYMBOL VDS ID IDM VGS Ptot Tj:Tstg
SOT23
VALUE 60 0.15 3 ± 20 330
-55 to +150
UNIT V mA A V
mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source Breakdown Voltage
BVDSS 60 90
V ID=100µA, VGS=0V
Gate-Source Threshold Voltage
VGS(th)
0.
BS170F Datasheet
