z High Collector Current Capability z Low Collector-emitter Saturation Voltage z High Efficiency Leading to Less Heat Generation z Reduced PCB Requirements z Alternatived Effectively to.
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CJ201NL
SOT-23 Plastic-Encapsulate Transistors
CJ201NL TRANSISTOR (NPN)
SOT–23
FEATURES z High Collector Current Capability z Low Collector-emitter Saturation Voltage z High Efficiency Leading to Less Heat Generation z Reduced PCB Requirements z Alternatived Effectively to MOSFETS in Specific Applications
APPLICATIONS z Power Management z Peripheral Driver
MARKING: 201N
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO Collector-Base Voltage
30 V
VCEO Collector-Emitter Voltage
20 V
VEBO Emitter-Base Voltage
5V
IC Collector Current
1A
PC Collector Power Dissipation
300 mW
RΘJA Thermal Resistance From Junction To Ambient
417
℃/W
Tj Junction Temperature
150 ℃
Tstg Storage Temperature
-55～+150 ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless
CJ201NL Datasheet