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GTVA355001FC, GTVA355001EC Thermally-Enhanced High Power RF GaN on SiC HEMT

GTVA355001FC Description

GTVA355001EC/FC Thermally-Enhanced High Power RF GaN on SiC HEMT 500 W, 50 V, 2900 * 3500 MHz .
The GTVA355001EC and GTVA355001FC are 500-watt GaN on SiC high electron mobility transistors (HEMTs) for use in the 2900 to 3500 MHz frequecy band.

GTVA355001FC Features

* GaN on SiC HEMT technology
* Broadband internal input and output matching
* Typical pulsed CW performance (class AB), 3500 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power at P3dB = 500 W - Drain efficiency = 65% - Gain = 13 dB
* Pb-free and RoHS complia

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: GTVA355001FC, GTVA355001EC. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
GTVA355001FC, GTVA355001EC
Manufacturer
Wolfspeed
File Size
539.28 KB
Datasheet
GTVA355001EC-Wolfspeed.pdf
Description
Thermally-Enhanced High Power RF GaN on SiC HEMT
Note
This datasheet PDF includes multiple part numbers: GTVA355001FC, GTVA355001EC.
Please refer to the document for exact specifications by model.

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Thermally-Enhanced High Power GaN SiC HEMT Wolfspeed
Wolfspeed GTVA355001FC-like datasheet