GTVA355001FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

Product Overview

Wolfspeed

Part number	GTVA355001FC
Manufacturer	Wolfspeed
File Size	539.28 KB
Description	Thermally-Enhanced High Power RF GaN on SiC HEMT
Datasheet	GTVA355001FC Datasheet
Note	This datasheet PDF includes multiple part numbers: GTVA355001FC, GTVA355001EC. Please refer to the document for exact specifications by model.
Additional preview pages of the GTVA355001FC datasheet.

The GTVA355001EC and GTVA355001FC are 500-watt GaN on SiC high electron mobility transistors (HEMTs) for use in the 2900 to 3500 MHz frequecy band.

They feature input and output matching, high efficiency, and a thermally-enhanced packages.

GaN on SiC HEMT technology.
Broadband internal input and output matching.
Typical pulsed CW performance (class AB), 3500 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power at P3dB = 500 W - Drain efficiency = 65% - Gain = 13 dB.
Pb-free and RoHS compliant GTVA355001FC Package H-37248-2 Target RF Characteristics Pulsed CW Specifications (tested in Wolfspeed class AB test fixture) VDD = 50 V, IDQ = 200 mA, POUT = 500 W, ƒ = 3500 MHz, pulse width = 3.

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Published: Jul 26, 2024 |