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CPW2-0600-S008B - Gen 2 Silicon Carbide Schottky Diode

Description

This is the 2nd generation of high voltage, high performance ZRec© silicon carbide Schottky diode in a packageless bare die format to be implemented into any custom module design.

Features

  • 600V Schottky Rectifier.
  • Zero Reverse Recovery.
  • Zero Forward Recovery.
  • High-Frequency Operation.
  • Temperature-Independent Switching Behavior.
  • Extremely Fast Switching.
  • Positive Temperature Coefficient on VF.

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CPW2-0600-S008B. 1 CPW2-0600-S008B Gen 2 Silicon Carbide Schottky Diode Description This is the 2nd generation of high voltage, high performance ZRec© silicon carbide Schottky diode in a packageless bare die format to be implemented into any custom module design. The lower forward voltage, smaller reverse leakage current, zero reverse recovery, and high thermal conductivity make this Schottky diode ideal for high frequency switching applications including high density DC to DC converters. This Schottky diode can be used in conjunction with either IGBT or MOSFET as an antiparallel diode, or as a rectifier.