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CPW2-0600S008 - Silicon Carbide Schottky Diode

Datasheet Summary

Features

  • Chip Outline VRRM = 600 V IF(AVG) = 8 A Qc = 21 nC.
  • 600-Volt Schottky Rectifier.
  • Zero Reverse Recovery.
  • Zero Forward Recovery.
  • High-Frequency Operation.
  • Temperature-Independent Switching Behavior.
  • Extremely Fast Switching.
  • Positive Temperature Coefficient on VF Part Number CPW2-0600S008B Anode Al Cathode NiV/Ag Package Sawn on Foil Marking Wafer # on Foil Maximum Ratings Symbol Parameter Value Unit Test Conditions.

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Datasheet Details

Part number CPW2-0600S008
Manufacturer CREE
File Size 145.83 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet CPW2-0600S008 Datasheet
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CPW2-0600S008–Silicon Carbide Schottky Diode Chip Z-RecTM Rectifier Features Chip Outline VRRM = 600 V IF(AVG) = 8 A Qc = 21 nC • 600-Volt Schottky Rectifier • Zero Reverse Recovery • Zero Forward Recovery • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Part Number CPW2-0600S008B Anode Al Cathode NiV/Ag Package Sawn on Foil Marking Wafer # on Foil Maximum Ratings Symbol Parameter Value Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 600 V VRSM Surge Peak Reverse Voltage 600 V VDC DC Blocking Voltage 600 V IF(AVG) Average Forward Current 8 A Tj=175˚C IFRM Repetitive Peak Forward Surge Current 57 A TC=25˚C, tP = 10 ms, Half Sine Wave, D=0.
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