CMPA801B030D amplifier equivalent, power amplifier.
* 28 dB Small Signal Gain
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40 W Typical PSAT Operation up to 28 V
* High Breakdown Voltage
* High Temperature Operation
* Size 0.142 x 0..
* Point to Point Radio
* Communications
* Test Instrumentation
* EMC Amplifiers
* Radar
Rev 0.2
Cree’s CMPA801B030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, hig.
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