C6D10170H diode equivalent, 10a silicon carbide schottky diode.
* Low Forward Voltage (VF) Drop with Positive
Temperature Coefficient
* Zero Reverse Recovery Current / Forward
Recovery Voltage
* Temperature-Independent Swi.
Package Types: TO-247-2 Marking: C6D10170H
Features
* Low Forward Voltage (VF) Drop with Positive
Temperature Coe.
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diode.
Image gallery
TAGS
Download