WFF7N65 mosfet equivalent, n-channel mosfet.
* RDS(on) (Max 1.4 Ω )@VGS=10V
* Gate Charge (Typical 28nC)
* Improved dv/dt Capability, High Ruggedness
* 100% Avalanche Tested
* Maximum Junction Te.
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for.
Image gallery
TAGS
Download (Size : 736.92KB)