WFP70N06T mosfet equivalent, silicon n-channel mosfet.
� � � � � 68A,60V, RDS(on)(Max18mΩ)@VGS=10V Ultra-low Gate charge(Typical 20nC) Improved dv/dt capability 100%Avalanche Tested Maximum Junction Temperature Range(175℃)
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This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche.
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