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Features ■ 70A,60V, RDS(on)(Max0.014Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 70nC) ■ Low Crss (Typical 160pF)
■ Improved dv/dt capability
■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(175℃)
WFP70N06
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Semiwell's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics,DC-DC Converters and power management in portableand,battery operatedproducts.