� 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate charge(Typical 54nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) G.

Silicon N-Channel MOSFET Features � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate charge(Typical 54nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produc.

WFF8N60

WFF8N60B

WFF8N65B

WFF8N65L

WFF8N80

WFF830

WFF840

WFF840B

WFF

WFF10N60

WFF10N65

WFF10N65L

WFF1101

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