WFF8N60 mosfet equivalent, silicon n-channel mosfet.
� � � � � � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage (VISO=4000V AC) Maximu.
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well su.
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