WFF5N65L mosfet equivalent, silicon n-channel mosfet.
� 4.5A,650V,RDS(on)(Max2.8Ω)@VGS=10V � Ultra-low Gate charge(Typical 14.5nC) � Fast Switching Capability � 100%Avalanche Tested � Enhanced EMI capability � Maximum Juncti.
Silicon N-Channel MOSFET
Features
� 4.5A,650V,RDS(on)(Max2.8Ω)@VGS=10V � Ultra-low Gate charge(Typical 14.5nC) � Fast Switching Capability � 100%Avalanche Tested � Enhanced EMI capability � Maximum Junction Temperature Range(150℃)
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