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WFF5N60B - Silicon N-Channel MOSFET

Datasheet Summary

Description

Silicon N-Channel MOSFET

Features

  • 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 15nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.

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Datasheet preview – WFF5N60B

Datasheet Details

Part number WFF5N60B
Manufacturer Winsemi
File Size 205.94 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFF5N60B Datasheet
Additional preview pages of the WFF5N60B datasheet.

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Full PDF Text Transcription

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WFF5N60B Product Description Silicon N-Channel MOSFET Features � 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
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