� 2A,650V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 8nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) Gen.

Silicon N-Channel MOSFET Features � 2A,650V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 8nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produce.

WFF2N65

WFF2N65B

WFF2N60

WFF2N60B

WFF20N60

WFF20N60S

WFF

WFF10N60

WFF10N65

WFF10N65L

WFF1101

WFF1121

WFF1201

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