WFF2N60B mosfet equivalent, power mosfet.
� 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 5.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
G.
Silicon N-Channel MOSFET
Features
� 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 5.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produ.
Image gallery
TAGS
Download (Size : 251.87KB)