WFF12N65L mosfet equivalent, silicon n-channel mosfet.
� 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V � Ultra-low Gate charge(Typical 40nC) � Fast Switching Capability � 100%Avalanche Tested � Enhanced EMI capability � Maximum Junction .
Silicon N-Channel MOSFET
Features
� 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V � Ultra-low Gate charge(Typical 40nC) � Fast Switching Capability � 100%Avalanche Tested � Enhanced EMI capability � Maximum Junction Temperature Range(150℃)
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