WFF12N65 mosfet equivalent, silicon n-channel mosfet.
* 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V
* Ultra-low Gate Charge(Typical 51.7nC)
* Fast Switching Capability
* 100%Avalanche Tested
* Maximum Junction Temp.
Thi s Pow e r MO SF ET is pr od u ced usi ng Wi n sem i ’s adv an ce d planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is.
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