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5HB03N8 Datasheet, Winsemi

5HB03N8 h-bridge equivalent, 30v so8 complementary enhancementmode mosfet h-bridge.

5HB03N8 Avg. rating / M : 1.0 rating-11

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5HB03N8 Datasheet

Features and benefits

low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features
*
* 2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.5 V) gate drive .

Application


*
* N1G N2G DC Motor control DC-AC Inverters N1S/N2S Ordering information vice De Dev 5HB03N8 Reel size es) .

Description

This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features
*
* 2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.5 V) gate drive P1D/N1D P2D/N2D App.

Image gallery

5HB03N8 Page 1 5HB03N8 Page 2 5HB03N8 Page 3

TAGS

5HB03N8
30V
SO8
Complementary
enhancementmode
MOSFET
H-Bridge
Winsemi

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