The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
PFP6N90E / PFF6N90E
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 30.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.9Ω (Typ.) @VGS=10V
APPLICATION
High current, High speed switching Suitable for power supplies, adaptors and PFC SMPS (Switched Mode Power Supplies)
PFP6N90E / PFF6N90E
900V N-Channel MOSFET
BVDSS = 900 V RDS(on) = 1.9 Ω ID = 5.7 A
TO-220
Drain
Gate
●
◀▲
● ●
Source
TO-220F
1 2 3
1.Gate 2. Drain 3. Source
12 3
1.Gate 2. Drain 3.
PFF6N90E Datasheet
